Analysis of the triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices

Abstract

Triggering uniformity and scaling behavior under TLP stress is investigated in single and multi-finger 0.35 μm BCD6 gc-NMOS ESD protection devices. Current flow distribution within a single-finger and over different fingers is analyzed by transient interferometric mapping technique. The steps in IV characteristics are attributed to the particular triggering pattern of fingers. The experiments are validated by TCAD device simulations.