Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Abstract

The triggering of grounded gate nMOSFET (gg-nMOS) and field-oxide devices (FOXFETs), essential for optimized ESD protection design, is addressed by TLP-pulsed emission microscopy. Current nonuniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprehensive correlation of emission and electrical behaviour allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed.