L. Zullino

Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

Susanna Reggiani, M. Valdinoci, Luigi Colalongo et al. · IEEE Transactions on Electron Devices · 2002 · 134 citations

Engineering, Electrical Engineering, Materials Science +17

Impact-ionization in silicon at large operating temperature

M. Valdinoci, D. Ventura, M.C. Vecchi et al. · 2003 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization and modeling of transient device behavior under CDM ESD stress

Joost Willemen, A. Andreini, V. De Heyn et al. · Journal of Electrostatics · 2004 · 30 citations

Engineering, Electrical Engineering, Electronic Materials +12

Study of CDM specific effects for a smart power input protection structure

M. Etherton, Ningsong Qu, Joost Willemen et al. · Microelectronics Reliability · 2005 · 14 citations

Engineering, Electrical Engineering, Power Electronics +6

Analysis of the triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices

M. Heer, S. Bychikhin, V. Dubec et al. · Research Padua Archive (University of Padua) · 2006 · 10 citations

Engineering, Electrical Engineering, Hardware Security +12