Impact-ionization in silicon at large operating temperature

Abstract

In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400/spl deg/C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits the theoretical data from the Boltzmann solver HARM and the available experimental data in the above temperature range. The new model has been validated by simulating the reverse characteristics of junction diodes, and turns out to correctly predict the temperature dependence of breakdown voltage.