Laser annealed HfxZr1−xO2 high-k dielectric: Impact on morphology, microstructure, and electrical properties

Abstract

The impact of microsecond laser annealing at 1325°C on physical and electrical characteristics of HfxZr1−xO2 is compared to films annealed at 1000°C for 5s by a conventional rapid thermal process (RTP). Atomic force microscopy analysis shows that laser annealed HfxZr1−xO2 is smoother and void free, while RTP annealed HfxZr1−xO2 exhibits void formation and is rough. The x-ray diffraction analysis revealed higher degree of tetragonality on laser annealed film, particularly for Hf0.5Zr0.5O2 and ZrO2. Furthermore, laser annealed HfxZr1−xO2 devices have good electrical properties (well behaved CV, low gate leakage, and good mobility) whereas RTP annealed devices are not functional.