A novel 4H-SiC MESFET with ultrahigh upper gate

Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices

Christophe Raynaud, Dominique Tournier, Hervé Morel et al. · Diamond and Related Materials · 2009 · 103 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-Frequency Solid-State Electronic Devices

R.J. Trew · IEEE Transactions on Electron Devices · 2005 · 102 citations

Engineering, Electrical Engineering, Materials Science +17

Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

Sima Dimitrijev, Jisheng Han, Hamid Amini Moghadam et al. · MRS Bulletin · 2015 · 82 citations

Engineering, Electrical Engineering, Materials Science +16

Improved performance of SiC MESFETs using double-recessed structure

C.L. Zhu, Rusli Rusli, C. C. Tin et al. · Microelectronic Engineering · 2005 · 77 citations

Engineering, Electrical Engineering, Materials Science +13

A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

Amirhossein Aminbeidokhti, Ali A. Orouji, Soude Rahmaninezhad et al. · IEEE Transactions on Electron Devices · 2012 · 52 citations

Engineering, Electrical Engineering, Microelectronics +16