Concepedia

Three-dimensional Device Scaling

Three-Dimensional Device Scaling is a semiconductor device scaling strategy that extends miniaturization beyond planar dimensions by vertically integrating multiple layers or stacks of transistors, thereby increasing device density and performance while mitigating short-channel effects inherent in traditional two-dimensional scaling.

116

Publications

5K

Citations

774

Authors

105

Institutions

Publications per year

2017–2026

40

Parents

Publications

116

Analysis of the Parasitic S/D Resistance in Multiple-Gate FETs

Abhisek Dixit, Anil Kottantharayil, Nadine Collaert et al. · IEEE Transactions on Electron Devices · 2005 · 355 citations

, , +16

Perspective: New process technologies required for future devices and scaling

Robert D. Clark, Kandabara Tapily, K.H. Yu et al. · APL Materials · 2018 · 192 citations · Full text

, , +17

Recent Progress on 3D NAND Flash Technologies

Akira Goda · Electronics · 2021 · 152 citations · Full text

, , +16

Is 3D chip technology the next growth engine for performance improvement?

P Emma, Eren Kursun · IBM Journal of Research and Development · 2008 · 151 citations

, , +14

First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers

S. Subramanian, M. Reza Hosseini, T. Chiarella et al. · 2020 · 119 citations

, , +16

1–5 of 116

Authors

774

  1. JR
    Julien Ryckaert

    IMEC, Belgium

    5 publications · 238 citations

    6

    h-index

  2. HL
    Hang-Ting Lue

    Macronix International (Taiwan), Taiwan

    5 publications · 188 citations

    5

    h-index

  3. NC
    Nadine Collaert

    IMEC, Belgium

    4 publications · 426 citations

    4

    h-index

  4. YH
    Yi‐Hsuan Hsiao

    Changhua Christian Hospital, Taiwan

    4 publications · 174 citations

    4

    h-index

  5. CL
    Chih-Yuan Lu

    Macronix International (Taiwan), Taiwan

    4 publications · 174 citations

    4

    h-index

1–5 of 774

Institutions

105

  1. IMEC

    Leuven, Belgium

    11 h-index

    132 publications

    7K citations

  2. Samsung (South Korea)

    Seoul, South Korea

    8 h-index

    175 publications

    11.5K citations

  3. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    6 h-index

    36 publications

    2.3K citations

  4. Micron (United States)

    Boise, United States

    6 h-index

    10 publications

    562 citations

  5. Intel (United States)

    Santa Clara, United States

    5 h-index

    32 publications

    3.5K citations

  6. Macronix International (Taiwan)

    Hsinchu, Taiwan

    5 h-index

    60 publications

    1.9K citations

  7. Georgia Institute of Technology

    Atlanta, United States

    5 h-index

    9 publications

    274 citations

  8. Toshiba (Japan)

    Tokyo, Japan

    4 h-index

    12 publications

    763 citations

1–8 of 105

Venues

  1. IEEE Transactions on Electron Devices

    8 publications · 666 citations

    8

    h-index

  2. IEEE Electron Device Letters

    3 publications · 100 citations

    4

    h-index

  3. IBM Journal of Research and Development

    2 publications · 234 citations

    2

    h-index

  4. European Solid-State Device Research Conference

    Conference · 2 publications · 48 citations

    2

    h-index

  5. Applied Physics Letters

    2 publications · 86 citations

    2

    h-index

1–5