K.H. Yu

Perspective: New process technologies required for future devices and scaling

Robert D. Clark, Kandabara Tapily, K.H. Yu et al. · APL Materials · 2018 · 192 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Stress evolution during isochronal annealing of Ni/Si system

C. J. Tsai, K.H. Yu · Thin Solid Films · 1999 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +14

Nitride-Based LEDs with an Insulating SiO[sub 2] Layer Underneath p-Pad Electrodes

Sue-Joan Chang, C.F. Shen, Wei‐Sheng Chen et al. · Electrochemical and Solid-State Letters · 2007 · 33 citations

Engineering, Electrical Engineering, Materials Science +15

Stress evolution of Ni/Pd/Si reaction system under isochronal annealing

C. J. Tsai, Ping-Han Chung, K.H. Yu · Thin Solid Films · 2000 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +11

Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

Hsi-Jen Pan, Kun‐Wei Lin, K.H. Yu et al. · Electronics Letters · 2002 · 14 citations

Engineering, Electrical Engineering, Materials Science +17