APL Materials · 2018 · 192 citations · 44 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsDevice ScalingEtching ProcessesIntegrated Circuit FabricationThin Film EtchingThin-film DepositionThin-film PatterningContact ScalingFilm DepositionInterconnect FabricationInterconnect ScalingMonolithic ArchitectureTechnology ScalingThree-dimensional Device ScalingThree-dimensional Integration
This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and provide examples of emerging devices and architectures that may be implemented within the next 10-20 yr. We summarize multiple active areas of research to explain how future thin film deposition, etch, and patterning technologies can enable 3D (vertical) power, performance, area, and cost scaling. Emerging and new process technologies will be required to enable improved contacts, scaled and future devices and interconnects, monolithic 3D integration, and new computing architectures. These process technologies are explained and discussed with a focus on opportunities for continued improvement and innovation.
44
Ferroelectricity in hafnium oxide thin films
T. S. Böscke, Johannes Müller, D. Bräuhaus et al. · Applied Physics Letters · 2011 · 2.7K citations
Natural Sciences, Materials Engineering, Materials Science +17
Low dielectric constant materials for microelectronics
Karen Maex, Mikhaı̈l R. Baklanov, Denis Shamiryan et al. · Journal of Applied Physics · 2003 · 1.6K citations
Natural Sciences, Materials Engineering, Materials Science +17
Electron mean free path in elemental metals
Daniel Gall · Journal of Applied Physics · 2016 · 1K citations