Chih-Yuan Lu

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

Wei-Chih Chien, Y.C. Chen, Erh-Kun Lai et al. · IEEE Electron Device Letters · 2010 · 108 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device

Yi‐Chou Chen, C.F. Chen, C.T. Chen et al. · 2004 · 93 citations

Hardware Security, Self-rectifying Chalcogenide Device, Electrical Engineering +13

Data retention behavior of a SONOS type two-bit storage flash memory cell

Wen-Jer Tsai, N. K. Zous, C.J. Liu et al. · 2002 · 91 citations

Non-volatile Memory, Electrical Engineering, Data Retention Loss +15

Future Prospects of NAND Flash Memory Technology—The Evolution from Floating Gate to Charge Trapping to 3D Stacking

Chih-Yuan Lu · Journal of Nanoscience and Nanotechnology · 2012 · 82 citations

Conventional Floating Gate, Non-volatile Memory, Electrical Engineering +14

Numerical Simulation of Bottom Oxide Thickness Effect on Charge Retention in SONOS Flash Memory Cells

Shaw-Hung Gu, Chih-Wei Hsu, Tahui Wang et al. · IEEE Transactions on Electron Devices · 2007 · 65 citations

Non-volatile Memory, Engineering, Bottom Oxide +19