C.F. Chen

Novel Lithography-Independent Pore Phase Change Memory

M. Breitwisch, T. Nirschl, C.F. Chen et al. · 2007 · 109 citations

Materials Science, Pore Diameter, Electrical Engineering +14

An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device

Yi‐Chou Chen, C.F. Chen, C.T. Chen et al. · 2004 · 93 citations

Hardware Security, Self-rectifying Chalcogenide Device, Electrical Engineering +13

Multi-layer sidewall WO<inf>X</inf> resistive memory suitable for 3D ReRAM

Wei-Chih Chien, F.M. Lee, Yu‐Yu Lin et al. · 2012 · 32 citations

Engineering, Emerging Memory Technology, Multi-layer Sidewall Wo +20

Understanding amorphous states of phase-change memory using Frenkel-Poole model

Yang‐Hsin Shih, M.H. Lee, M. Breitwisch et al. · 2009 · 24 citations

Materials Engineering, Materials Science, Electrical Engineering +15

The impact of hole-induced electromigration on the cycling endurance of phase change memory

M.H. Lee, R. Cheek, C.F. Chen et al. · 2010 · 16 citations

Electrical Engineering, Engineering, Physics +11