2007 · 110 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrofabricationSemiconductor DevicesDevice ScalingMemory DevicesMemory Subsystem DesignNanoporous MaterialsSemiconductor Device MaterialsThin Film LithographyCmos ScalingCritical Dimension ControlMemory Cell DesignMemory Circuit DesignMemory MaterialsNanoelectronic Memory DevicesNon-volatile Cmos MemoryPhase-change Memory
We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformal deposition. Fully integrated 256 kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80ns, RESET currents less than 250μA, and accurate sub-lithographic CDs that can be less than 20% the size of the lithographically -defined diameter.
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