Statistics
Publications
10
Citations
824
H-Index
10
Active since
2004
M. Lamorey is an author at IBM (United States) specializing in memory devices, engineering, and semiconductor devices.
Publications per year
2004–2008
10
10
Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory
T. Nirschl, C.-F. Chen, Eric Joseph et al. · 2007 · 274 citations
Ultra-Thin Phase-Change Bridge Memory Device Using GeSb
Y. C. Chen, Charles Rettner, Simone Raoux et al. · 2006 · 156 citations
Novel Lithography-Independent Pore Phase Change Memory
M. Breitwisch, T. Nirschl, C.F. Chen et al. · 2007 · 110 citations
Design considerations for MRAM
T. Maffitt, J. DeBrosse, John Gabric et al. · IBM Journal of Research and Development · 2006 · 83 citations
Natural Sciences, Electrical Engineering, Materials Science +17
Novel One-Mask Self-Heating Pillar Phase Change Memory
Thomas D. Happ, S.H. Chen, C.F. Chen et al. · 2006 · 58 citations
Engineering, Computer Engineering, Electrical Engineering +15
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