Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

Abstract

An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100muA RESET current. The device concept provides for simplified scaling to small cross-sectional area (60nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention