Multi-layer sidewall WO<inf>X</inf> resistive memory suitable for 3D ReRAM

Abstract

An easy to fabricate, low-cost, multi-layer sidewall WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> ReRAM device is proposed for 3D ReRAM application. A 2-layer (10nm × 100nm) device is fabricated and characterized for the first time. The WOX is grown by conventional RTO process but a special semi-permeable TiN (SP-TiN) is developed to achieve the necessary extrusion-free structure for 3D ReRAM. The multi-layer sidewall WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> ReRAM devices show characteristics similar to planar devices, but the reasons for layer-to-layer variation and some performance degradation still need to be understood.