Scanning Capacitance Microscopy

Scanning Capacitance Microscopy is a scanning probe microscopy technique that measures local variations in capacitance between a conductive atomic force microscope tip and a sample surface to map carrier concentration and dopant profiles in semiconductor materials with nanoscale resolution.

249

Publications

8.7K

Citations

705

Authors

202

Institutions

Publications per year

2017–2026

14

Authors

705

  1. CC
    C. C. Williams

    University of Utah, United States

    19 publications · 1.3K citations

    17

    h-index

  2. FG
    Filippo Giannazzo

    Institute for Microelectronics and Microsystems, Italy

    24 publications · 797 citations

    16

    h-index

  3. VR
    V. Raineri

    Institute for Microelectronics and Microsystems, Italy

    21 publications · 693 citations

    16

    h-index

  4. JJ
    Joseph J. Kopanski

    National Institute of Standards and Technology, United States

    17 publications · 574 citations

    14

    h-index

  5. JF
    J. F. Marchiando

    National Institute of Standards and Technology, United States

    11 publications · 382 citations

    11

    h-index

1–5 of 705

Venues

  1. Applied Physics Letters

    64 publications · 2.7K citations

    29

    h-index

  2. 22

    h-index

  3. Journal of Applied Physics

    28 publications · 1.2K citations

    18

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 11 publications · 201 citations

    10

    h-index

  5. Review of Scientific Instruments

    8 publications · 492 citations

    8

    h-index

1–5