Scanning Capacitance Microscopy
Scanning Capacitance Microscopy is a scanning probe microscopy technique that measures local variations in capacitance between a conductive atomic force microscope tip and a sample surface to map carrier concentration and dopant profiles in semiconductor materials with nanoscale resolution.
249
Publications
8.7K
Citations
705
Authors
202
Institutions
Publications per year
2017–2026
14
Parents
249
P. Hansen, Y. E. Strausser, Andrew Erickson et al. · Applied Physics Letters · 1998 · 263 citations
Scanning capacitance microscopy
James R. Matey, J. Blanc · Journal of Applied Physics · 1985 · 234 citations
Natural Sciences, Electrical Engineering, Materials Science +17
1–5 of 249
705
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h-index
Institute for Microelectronics and Microsystems, Italy
24 publications · 797 citations
16
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16
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National Institute of Standards and Technology, United States
17 publications · 574 citations
14
h-index
National Institute of Standards and Technology, United States
11 publications · 382 citations
11
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1–5 of 705
202
Institute for Microelectronics and Microsystems
Catania, Italy
16 h-index
80 publications
2.6K citations
University of Utah
Salt Lake City, United States
16 h-index
40 publications
1.9K citations
National Institute of Standards and Technology
Gaithersburg, United States
15 h-index
50 publications
2K citations
University of Catania
Catania, Italy
12 h-index
31 publications
914 citations
IMEC
Leuven, Belgium
10 h-index
52 publications
2.4K citations

TU Wien
Vienna, Austria
9 h-index
43 publications
935 citations
University of Cambridge
Cambridge, United Kingdom
9 h-index
45 publications
1.2K citations

KTH Royal Institute of Technology
Stockholm, Sweden
8 h-index
25 publications
426 citations
1–8 of 202
64 publications · 2.7K citations
29
h-index
47 publications · 1.5K citations
22
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28 publications · 1.2K citations
18
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JJAP · 11 publications · 201 citations
10
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8 publications · 492 citations
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