Joseph J. Kopanski

Statistics

Publications

Citations

1.3K

H-Index

Active since

1984

Affiliations

National Institute of Standards and Technology(Current)

Case Western Reserve University

George Mason University

Intel (United States)

Kwangwoon University

Joseph J. Kopanski is an author at National Institute of Standards and Technology specializing in engineering, applied physics, and electrical engineering.

ORCID

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsMicroscopyMaterial ScienceInstrumentationSurface ScienceDevice ModelingNanoelectronics

Publications per year

1984–2015

Publications

Influence of Metal–MoS<sub>2</sub>Interface on MoS<sub>2</sub>Transistor Performance: Comparison of Ag and Ti Contacts

Hui Yuan, Guangjun Cheng, Lin You et al. · ACS Applied Materials & Interfaces · 2014 · 113 citations

Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon

Joseph J. Kopanski, J. F. Marchiando, Jeremiah R. Lowney · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 107 citations

Scanning Capacitance Microscope, Engineering, Microscopy +19

Calibrated nanoscale dopant profiling using a scanning microwave microscope

H. Huber, I. Humer, M. Hochleitner et al. · Journal of Applied Physics · 2012 · 90 citations

Engineering, Microscopy, Integrated Circuits +16

Thermal oxidation of 3C silicon carbide single-crystal layers on silicon

C.D. Fung, Joseph J. Kopanski · Applied Physics Letters · 1984 · 84 citations

Materials Engineering, Materials Science, Parabolic Rate Constant +11

Characterization of two-dimensional dopant profiles: Status and review

Alain C. Diebold, M.R. Kump, Joseph J. Kopanski et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 83 citations

Engineering, Three-dimensional Dopant, Microscopy +21

1–5 of 33