C. C. Williams - Concepedia

Author

C. C. Williams

Also Known As

C C Williams, C C. Williams, C. C. WILLIAMS, C. C. Williams, C.C. Williams, C. C. Williams, Clayton C. Williams, Clayton Williams, Williams, C. C., Williams, C.C.

157

Publications

4.5K

Citations

H-Index

111

Concepts

All Affiliations

University of Utah IBM Research - Thomas J. Watson Research Center Digital Wave (United States)IBM (United States)

About

C. C. Williams is an author at University of Utah specializing in engineering, microscopy, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	51	4.2K
2	Applied Physics	28	45	3.9K
3	Medicine	11	11	1.7K
4	Natural Sciences	5	5	282
5	Education	4	4	582

C. C. Williams

Publications

4.3K

Citations

H-Index

Page 1

	Year	Citations
Atomic force microscope–force mapping and profiling on a sub 100-Å scale Y. Martin, C. C. Williams, H. K. Wickramasinghe Journal of Applied Physics EngineeringMicroscopyNanotribologyElectron MicroscopyMicroscopy Method	1987	1.4K
Scanning thermal profiler C. C. Williams, H. K. Wickramasinghe Applied Physics Letters EngineeringMeasurementEducationThermal ProfilerProfiling Technique	1986	403
TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY C. C. Williams Annual Review of Materials Science Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesDevice Modeling	1999	224
Scanning capacitance microscopy on a 25 nm scale C. C. Williams, W. P. Hough, S. A. Rishton Applied Physics Letters Materials ScienceCapacitance VariationsElectrical EngineeringEngineeringMicroscopy	1989	214
Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy C. C. Williams, J. Slinkman, W. P. Hough, Applied Physics Letters EngineeringMicroscopyDopant DensityIntegrated CircuitsSilicon On Insulator	1989	167
Microscopy of chemical-potential variations on an atomic scale C. C. Williams, H. K. Wickramasinghe Nature EngineeringElectron MicroscopyMicroscopyNatural SciencesSurface Science	1990	100
Advances in experimental technique for quantitative two-dimensional dopant profiling by scanning capacitance microscopy Vladimir V. Zavyalov, J. S. McMurray, C. C. Williams Review of Scientific Instruments EngineeringMicroscopyIntegrated CircuitsSilicon On InsulatorQuantitative Scm Profiles	1999	89
Scanning capacitance microscope methodology for quantitative analysis of p-n junctions Vladimir V. Zavyalov, J. S. McMurray, C. C. Williams Journal of Applied Physics EngineeringMicroscopySemiconductor DeviceTunneling MicroscopyElectron Microscopy	1999	82
Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures G. Neubauer, Andrew Erickson, C. C. Williams, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringMicroscopyIntegrated CircuitsIon ImplantationCross Sections	1996	81
Optical ranging by wavelength multiplexed interferometry C. C. Williams, H. K. Wickramasinghe Journal of Applied Physics Wavelength Multiplexed InterferometryEngineeringMicroscopyOptical TestingInterferometry	1986	74

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