Concepedia

Microloading Effect

Microloading Effect is an etching phenomenon characterized by the variation in etch rate across a substrate due to localized differences in feature density, where areas with lower pattern density etch faster than denser regions as a result of limited reactant depletion and byproduct accumulation in high-density areas.

23

Publications

1.6K

Citations

91

Authors

28

Institutions

Publications per year

2017–2026

1

Variants

Microloading

Parents

Publications

23

Microscopic uniformity in plasma etching

Richard A. Gottscho, C. W. Jurgensen, D. J. Vitkavage · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 615 citations

, , +17

New Phenomena of Charge Damage in Plasma Etching: Heavy Damage Only through Dense-Line Antenna

Kouichi Hashimoto · Japanese Journal of Applied Physics · 1993 · 174 citations

, , +14

Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect

Junghoon Yeom, Yan Wu, John C. Selby et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2005 · 144 citations

, , +15

Microloading effect in reactive ion etching

Christer Hedlund, Hans‐Olof Blom, S. Berg · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1994 · 124 citations

, , +13

Atomic Layer Controlled Digital Etching of Silicon

Hiroyuki Sakaue, Seiji Iseda, Kazushi Asami et al. · Japanese Journal of Applied Physics · 1990 · 86 citations

, , +17

1–5 of 23

Authors

91

  1. TI
    Takanori Ichiki

    The University of Tokyo, Japan

    2 publications · 41 citations

    2

    h-index

  2. YH
    Y. Horiike

    Hiroshima University, Japan

    2 publications · 41 citations

    2

    h-index

  3. JY
    Junghoon Yeom

    University of Illinois Urbana-Champaign, United States

    2 publications · 188 citations

    2

    h-index

  4. MA
    Mark A. Shannon

    University of Illinois Urbana-Champaign, United States

    2 publications · 188 citations

    2

    h-index

  5. YC
    Yasuhiko Chinzei

    Toyo University, Japan

    2 publications · 41 citations

    2

    h-index

1–5 of 91

Institutions

28

  1. Mitsubishi Electric (Japan)

    Tokyo, Japan

    3 h-index

    29 publications

    492 citations

  2. Toyo University

    Tokyo, Japan

    2 h-index

    10 publications

    171 citations

  3. NEC (Japan)

    Tokyo, Japan

    2 h-index

    4 publications

    122 citations

  4. Fujitsu (Japan)

    Kawasaki, Japan

    2 h-index

    4 publications

    261 citations

  5. University of Illinois Urbana-Champaign

    Urbana, United States

    2 h-index

    7 publications

    708 citations

  6. National Archives and Records Administration

    Washington, United States

    1 h-index

    4 publications

    44 citations

  7. Indian Institute of Science Bangalore

    Bengaluru, India

    1 h-index

    1 publications

    86 citations

  8. Hiroshima University

    Hiroshima, Japan

    1 h-index

    6 publications

    516 citations

1–8 of 28

Venues

  1. Japanese Journal of Applied Physics

    JJAP · 6 publications · 360 citations

    6

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  2. 5

    h-index

  3. 4

    h-index

  4. 2

    h-index

  5. Applied Physics Letters

    1 publications · 36 citations

    1

    h-index

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