Concepedia

Gate Charge Management

Gate Charge Management is an electronic control methodology that specifically governs the injection and extraction of charge in power semiconductor gate terminals to optimize switching performance and minimize losses in power electronic converters.

102

Publications

3.3K

Citations

390

Authors

132

Institutions

Publications per year

2017–2026

26

Parents

Publications

102

The Trench Power MOSFET: Part I—History, Technology, and Prospects

R.K. Williams, M. Darwish, Richard Blanchard et al. · IEEE Transactions on Electron Devices · 2017 · 284 citations

, , +16

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Transactions on Electron Devices · 2007 · 227 citations

, , +17

Solution to trapped charge in FGMOS transistors

Esther Rodriguez–Villegas, H. Barnes · Electronics Letters · 2003 · 131 citations

, , +16

Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge

P. Goarin, G.E.J. Koops, R. van Dalen et al. · 2007 · 101 citations

, , +9

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

Jin Wei, Meng Zhang, Huaping Jiang et al. · IEEE Electron Device Letters · 2016 · 101 citations

, , +14

1–5 of 102

Authors

390

  1. JW
    Jin Wei

    Hong Kong University of Science and Technology, Hong Kong SAR China

    5 publications · 253 citations

    5

    h-index

  2. KJ
    Kevin J. Chen

    Hong Kong University of Science and Technology, Hong Kong SAR China

    4 publications · 197 citations

    4

    h-index

  3. HJ
    Huaping Jiang

    Chongqing University, China

    4 publications · 211 citations

    4

    h-index

  4. MZ
    Meng Zhang

    Hong Kong Polytechnic University, Hong Kong SAR China

    4 publications · 197 citations

    4

    h-index

  5. PR
    Phil Rutter

    Stockport College, United Kingdom

    3 publications · 333 citations

    3

    h-index

1–5 of 390

Institutions

132

  1. Hong Kong University of Science and Technology

    Hong Kong, Hong Kong

    7 h-index

    16 publications

    753 citations

  2. National Engineering Research Center of Electromagnetic Radiation Control Materials

    Chengdu, China

    6 h-index

    39 publications

    716 citations

  3. University of Electronic Science and Technology of China

    Chengdu, China

    5 h-index

    36 publications

    566 citations

  4. Toshiba (Japan)

    Tokyo, Japan

    4 h-index

    15 publications

    2K citations

  5. Hong Kong Polytechnic University

    Hong Kong, Hong Kong

    3 h-index

    5 publications

    272 citations

  6. Centre National de la Recherche Scientifique

    Paris, France

    3 h-index

    6 publications

    120 citations

  7. Fuji Electric (Japan)

    Tokyo, Japan

    3 h-index

    11 publications

    238 citations

  8. University of Toronto

    Toronto, Canada

    3 h-index

    7 publications

    187 citations

1–8 of 132

Venues

  1. IEEE Transactions on Electron Devices

    11 publications · 845 citations

    11

    h-index

  2. IEEE Electron Device Letters

    9 publications · 379 citations

    9

    h-index

  3. IEEE Journal of Solid-State Circuits

    4 publications · 125 citations

    4

    h-index

  4. Microelectronics Reliability

    3 publications · 50 citations

    3

    h-index

  5. IEEE Transactions on Nuclear Science

    3 publications · 124 citations

    3

    h-index

1–5