R.K. Williams

The Trench Power MOSFET: Part I—History, Technology, and Prospects

R.K. Williams, M. Darwish, Richard Blanchard et al. · IEEE Transactions on Electron Devices · 2017 · 263 citations

Vertical Trench Vdmos, Electrical Engineering, Semiconductor Device +14

The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

R.K. Williams, M. Darwish, Richard Blanchard et al. · IEEE Transactions on Electron Devices · 2017 · 139 citations

Low-power Electronics, Electrical Engineering, Lateral Trench +10

New physical insights and models for high-voltage LDMOST IC CAD

Y.-S. Kim, J.G. Fossum, R.K. Williams · IEEE Transactions on Electron Devices · 1991 · 57 citations

Lateral Dmost, Engineering, Modeling Methodology +17

Cooperativity and anticooperativity in solvation by water: imidazoles, quinones, nitrophenols, nitrophenolate, and nitrothiophenolate ions

Richard Wolfenden, Yu-Lan Liang, Margaret M. Matthews et al. · Journal of the American Chemical Society · 1987 · 51 citations

Margaret Matthews, Molecular Sciences, Nitrothiophenolate Ions +14

Equilibrium of a magnet floating above a superconducting disk

R.K. Williams, James R. Matey · Applied Physics Letters · 1988 · 39 citations

Total Energy, Superconducting Material, Magnetic Properties +19