The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

Abstract

The technological development of application specific VDMOS and lateral trench power MOSFETs is described. Unlike general-purpose trench vertical DMOS, application specific trench DMOS comprise devices merged or optimized for a specific function or characteristic. Examples include the bidirectional lithium ion battery disconnect switch, the airbag squib driver with safety redundancy, the antilock breaking systems solenoid driver with repeated avalanche operation, and various forms of synchronous rectifiers (including integrated Schottky and pseudo-Schottky operation). Trench lateral DMOS include all implant quasi-vertical, lateral trench, and lateral trench charge balanced devices. Trench power MOSFET packaging addresses multichip surface mount, DrMOS, low inductance, and clip lead packages.