Concepedia

M. Darwish

MD

20

Publications

1.2K

Citations

16

H-Index

1982

Active since

Affiliations

AT&T (United States)(Current)

Swansea University

Silicon Labs (United States)

Naval Air Warfare Center Weapons Division

Carnegie Mellon University

M. Darwish is an author at AT&T (United States) specializing in electrical engineering, engineering, and microelectronics.

Top concepts

EngineeringElectrical EngineeringMicroelectronicsApplied PhysicsNanoelectronicsPower ElectronicsLow-power ElectronicsElectronic EngineeringDevice ModelingComputer Engineering

Publications per year

1982–2018

20

Publications

20

The Trench Power MOSFET: Part I—History, Technology, and Prospects

R.K. Williams, M. Darwish, Richard Blanchard et al. · IEEE Transactions on Electron Devices · 2017 · 263 citations

Vertical Trench Vdmos, Electrical Engineering, Semiconductor Device +14

An improved electron and hole mobility model for general purpose device simulation

M. Darwish, J.L. Lentz, M.R. Pinto et al. · IEEE Transactions on Electron Devices · 1997 · 178 citations

Engineering, Hole Mobility Model, Semiconductor Device +19

The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

R.K. Williams, M. Darwish, Richard Blanchard et al. · IEEE Transactions on Electron Devices · 2017 · 139 citations

Low-power Electronics, Electrical Engineering, Lateral Trench +10

A new 800 V lateral MOSFET with dual conduction paths

Don Disney, A.K. Paul, M. Darwish et al. · 2002 · 116 citations

Low-power Electronics, Electrical Engineering, New 800 +12

Study of the quasi-saturation effect in VDMOS transistors

M. Darwish · IEEE Transactions on Electron Devices · 1986 · 105 citations

Device Modeling, Electrical Engineering, Engineering +8

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