Solution to trapped charge in FGMOS transistors

Abstract

A solution to the problem of charge being trapped on the gate of a floating gate MOS transistor during fabrication is presented. The solution does not alter the floating nature of the gate of the device since it does not use any kind of active or passive device to get rid of the accumulated charge. In addition, it does not require any post-processing techniques such as exposure to UV light and does not require any extra masks.