Concepedia

Etch Profile Control

Etch Profile Control is a methodology in thin film etching processes that governs the shape and sidewall geometry of etched features by precisely modulating etchant species, plasma parameters, and masking techniques to achieve desired anisotropy, selectivity, and feature fidelity at micro- and nanoscale dimensions.

314

Publications

10.4K

Citations

1.3K

Authors

329

Institutions

Publications per year

2017–2026

38

Parents

Publications

314

The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

Henri Jansen, M. de Boer, R. Legtenberg · Journal of Micromechanics and Microengineering · 1995 · 593 citations · Full text

, , +17

Charging of pattern features during plasma etching

John Arnold, Herbert H. Sawin · Journal of Applied Physics · 1991 · 292 citations

, , +15

Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites

Zegao Wang, Qiang Li, Haoxiang Xu et al. · Nano Energy · 2018 · 260 citations

, , +15

Dynamic etching of silicon for broadband antireflection applications

Christopher C. Striemer, Philippe M. Fauchet · Applied Physics Letters · 2002 · 203 citations · Full text

, , +17

Preferential Etching and Etched Profile of GaAs

Yasuo Tarui, Yoshio Komiya, Yasoo Harada · Journal of The Electrochemical Society · 1971 · 152 citations

, , +15

1–5 of 314

Authors

1.3K

  1. HH
    Herbert H. Sawin

    Massachusetts Institute of Technology, United States

    6 publications · 533 citations

    6

    h-index

  2. TM
    Takahiro Maruyama

    Meijo University, Japan

    4 publications · 131 citations

    4

    h-index

  3. NF
    Nobuo Fujiwara

    Mitsubishi Electric (Japan), Japan

    4 publications · 131 citations

    4

    h-index

  4. RA
    Richard A. Gottscho

    AT&T (United States), United States

    4 publications · 112 citations

    4

    h-index

  5. AA
    Ankur Agarwal

    Applied Materials (United States), United States

    4 publications · 255 citations

    4

    h-index

1–5 of 1.3K

Institutions

329

  1. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    55 publications

    1.7K citations

  2. Massachusetts Institute of Technology

    Cambridge, United States

    10 h-index

    30 publications

    957 citations

  3. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    10 h-index

    40 publications

    1.1K citations

  4. Lam Research (United States)

    Fremont, United States

    9 h-index

    44 publications

    1.8K citations

  5. AT&T (United States)

    Bedminster, United States

    8 h-index

    33 publications

    762 citations

  6. University of California, Los Angeles

    Los Angeles, United States

    7 h-index

    23 publications

    726 citations

  7. CEA Grenoble

    Grenoble, France

    7 h-index

    24 publications

    899 citations

  8. The University of Osaka

    Osaka, Japan

    7 h-index

    21 publications

    371 citations

1–8 of 329

Venues

  1. 18

    h-index

  2. Journal of The Electrochemical Society

    JES · 27 publications · 944 citations

    17

    h-index

  3. 16

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 22 publications · 628 citations

    16

    h-index

  5. Thin Solid Films

    14 publications · 279 citations

    11

    h-index

1–5