Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites - Concepedia

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Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites

257

Citations

41

References

2018

Year

Zegao Wang, Qiang Li, Haoxiang Xu, Christian Dahl‐Petersen, Qian Yang, Daojian Cheng, Dapeng Cao, Flemming Besenbacher, Jeppe V. Lauritsen, Stig Helveg,

Transition Metal ChalcogenidesEngineeringHydrogen TransitionSurface ScienceApplied PhysicsControllable EtchingHydrogenChemistryPlasma EtchingMos2 Basal PlanesActive Edge Sites

References

	Year	Citations

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