Concepedia

K. Tokashiki

KT

Statistics

Publications

16

Citations

486

H-Index

12

Active since

1991

Affiliations

NEC (Japan)(Current)

Samsung (South Korea)

Applied Materials (United States)

K. Tokashiki is an author at NEC (Japan) specializing in semiconductor devices, microelectronics, and engineering.

Publications per year

1991–2009

16

Publications

16

Inductively Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Robust, Reliable, and Fine Conductor Etching

S. Banna, Ankur Agarwal, K. Tokashiki et al. · IEEE Transactions on Plasma Science · 2009 · 103 citations

Natural Sciences, Electrical Engineering, Physics +17

RuO<sub>2</sub>/TiN-Based Storage Electrodes for (Ba, Sr)TiO<sub>3</sub> Dynamic Random Access Memory Capacitors

Koichi Takemura, Shintaro Yamamichi, Pierre‐Yves Lesaicherre et al. · Japanese Journal of Applied Physics · 1995 · 74 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of simultaneous source and bias pulsing in inductively coupled plasma etching

Ankur Agarwal, Phillip J. Stout, S. Banna et al. · Journal of Applied Physics · 2009 · 61 citations

Natural Sciences, Materials Engineering, Physics +16

A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO/sub 3/ and RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gb-scale DRAMs

Shintaro Yamamichi, Pierre‐Yves Lesaicherre, Hisateru Yamaguchi et al. · IEEE Transactions on Electron Devices · 1997 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology

K. Tokashiki, Hong Cho, S. Banna et al. · Japanese Journal of Applied Physics · 2009 · 35 citations

Engineering, Electrical Engineering, Physics +17

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