A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO/sub 3/ and RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gb-scale DRAMs

Abstract

A Gb-scale DRAM stacked capacitor technology with (Ba,Sr)TiO/sub 3/ thin films is described, The four-layer RuO/sub 2//Ru/TiN/TiSi/sub x/, storage node configuration allows 500/spl deg/C processing and fine-patterning down to the 0.20 /spl mu/m size by electron beam lithography and reactive ion etching. Good insulating (Ba/sub 0.4/Sr/sub 0.6/)TiO/sub 3/ (BST) films with an SiO/sub 2/ equivalent thickness of 0.65 nm on the electrode sidewalls and leakage current of 1/spl times/10/sup -/6 A/cm/sup 2/ at 1 V are obtained by ECR plasma MOCVD without any post-deposition annealing, A lateral step coverage of 50% for BST is observed on the 0.2 /spl mu/m size storage node pattern, and the BST thickness on the sidewalls is very uniform, thanks to the ECR downflow plasma. Using this stacked capacitor technology, a sufficient cell capacitance of 25 fF for 1 Gb DRAMs can be achieved in a capacitor area of 0.125 /spl mu/m/sup 2/ with only the 0.3 /spl mu/m high-storage electrodes.