S. Sone

A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO/sub 3/ and RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gb-scale DRAMs

Shintaro Yamamichi, Pierre‐Yves Lesaicherre, Hisateru Yamaguchi et al. · IEEE Transactions on Electron Devices · 1997 · 46 citations

Engineering, Electrical Engineering, Materials Science +17

Low Temperature Deposition of (Ba, Sr)TiO₃ Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

S. Sone, Hisato Yabuta, Yoshitake Kato et al. · Japanese Journal of Applied Physics · 1996 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +16

An ECR MOCVD (Ba,Sr)TiO/sub 3/ based stacked capacitor technology with RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gbit-scale DRAMs

Shintaro Yamamichi, Pierre‐Yves Lesaicherre, Hisateru Yamaguchi et al. · 2002 · 20 citations

Engineering, Materials Engineering, Materials Science +15

Low-pressure CMP for 300-mm ultra low-k (k=1.6-1.8)/Cu integration

S. Kondo, Boram Yoon, S. Tokitoh et al. · 2004 · 16 citations

Engineering, Materials Engineering, Materials Science +14

Low-pressure CMP for reliable porous low-k/Cu integration

S. Kondo, S. Tokitoh, Boram Yoon et al. · 2004 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +15