Concepedia

Dopant Profiling

Dopant Profiling is a methodological framework in materials science that characterizes the spatial distribution, concentration, and chemical state of dopant atoms within a host material to determine their impact on electronic, optical, or structural properties.

154

Publications

5.8K

Citations

569

Authors

165

Institutions

Publications per year

2017–2026

10

Parents

Publications

154

TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY

C. C. Williams · Annual Review of Materials Science · 1999 · 225 citations

, , +17

Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy

Peter Wolf, R. J. Stephenson, Thomas Trenkler et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 190 citations

, , +17

Two-dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy

Albert K. Henning, Todd Hochwitz, J. Slinkman et al. · Journal of Applied Physics · 1995 · 182 citations

, , +17

Dopant profiling and surface analysis of silicon nanowires using capacitance–voltage measurements

Erik C. Garnett, Yu‐Chih Tseng, D. R. Khanal et al. · Nature Nanotechnology · 2009 · 172 citations

, , +17

Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy

C. C. Williams, J. Slinkman, W. P. Hough et al. · Applied Physics Letters · 1989 · 167 citations

, , +17

1–5 of 154

Authors

569

  1. CC
    C. C. Williams

    University of Utah, United States

    10 publications · 799 citations

    10

    h-index

  2. JS
    J. Slinkman

    IBM (United States), United States

    7 publications · 685 citations

    7

    h-index

  3. JJ
    Joseph J. Kopanski

    National Institute of Standards and Technology, United States

    7 publications · 400 citations

    7

    h-index

  4. YN
    Yasuyoshi Nagai

    Tohoku University, Japan

    5 publications · 158 citations

    5

    h-index

  5. TC
    Trudo Clarysse

    IMEC, Belgium

    5 publications · 383 citations

    5

    h-index

1–5 of 569

Institutions

165

  1. National Institute of Standards and Technology

    Gaithersburg, United States

    9 h-index

    22 publications

    1.2K citations

  2. Tohoku University

    Sendai, Japan

    9 h-index

    33 publications

    860 citations

  3. IMEC

    Leuven, Belgium

    8 h-index

    46 publications

    2.4K citations

  4. University of Utah

    Salt Lake City, United States

    8 h-index

    19 publications

    1.2K citations

  5. University of Cambridge

    Cambridge, United Kingdom

    8 h-index

    16 publications

    777 citations

  6. KU Leuven

    Leuven, Belgium

    6 h-index

    19 publications

    857 citations

  7. Institute for Microelectronics and Microsystems

    Catania, Italy

    5 h-index

    19 publications

    419 citations

  8. University of Sheffield

    Sheffield, United Kingdom

    5 h-index

    9 publications

    198 citations

1–8 of 165

Venues

  1. Applied Physics Letters

    24 publications · 951 citations

    20

    h-index

  2. 17

    h-index

  3. Journal of Applied Physics

    14 publications · 827 citations

    13

    h-index

  4. Ultramicroscopy

    9 publications · 306 citations

    9

    h-index

  5. 5

    h-index

1–5