Hisashi Takamizawa

Dopant distributions in n-MOSFET structure observed by atom probe tomography

Koji Inoue, Fumiko Yano, Akio Nishida et al. · Ultramicroscopy · 2009 · 89 citations

Engineering, Electrical Engineering, Physics +14

Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

Koji Inoue, Fumiko Yano, Akio Nishida et al. · Applied Physics Letters · 2009 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method

Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue et al. · Nanoscale · 2013 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +13

Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue et al. · Applied Physics Letters · 2011 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Yasuo Shimizu, Yōko Kawamura, Masashi Uematsu et al. · Journal of Applied Physics · 2011 · 41 citations

Natural Sciences, Materials Science, Physics +13