J.-L. Everaert

1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

Hao Yu, Marc Schaekers, Erik Rosseel et al. · 2015 · 44 citations · Full text

Materials Engineering, Materials Science, Semiconductor Technology +14

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

M. Popovici, J. Swerts, A. Redolfi et al. · Applied Physics Letters · 2014 · 35 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

Dirk J. Wouters, D. Maes, L. Goux et al. · Journal of Applied Physics · 2006 · 31 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Characterisation of CoSi₂/- and TiSi₂/n-GaAs Schottky barriers

J.-L. Everaert, R.L. Van Meirhaeghe, W.H. Laflère et al. · Semiconductor Science and Technology · 1990 · 27 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Conformal Doping of FINFETs: a Fabrication and Metrology Challenge

W. Vandervorst, J.-L. Everaert, Eveline Rosseel et al. · AIP conference proceedings · 2008 · 25 citations

Materials Science, Semiconductor Technology, Plasma Immersion Doping +15