J. Swerts

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

M. Popovici, J. Swerts, A. Redolfi et al. · Applied Physics Letters · 2014 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +17

Pore Sealing of Porous Ultralow-k Dielectrics by Self-Assembled Monolayers Combined with Atomic Layer Deposition

Silvia Armini, J. L. Prado, J. Swerts et al. · ECS Solid State Letters · 2012 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scaling

Clément Porret, J.-L. Everaert, Marc Schaekers et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 16 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification

Daniel Pérez Lozano, Massimo Mongillo, X Piao et al. · Materials for Quantum Technology · 2024 · 16 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Considerations for further scaling of metal–insulator–metal DRAM capacitors

B. Kaczer, Sergiu Clima, Kazuyuki Tomida et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +17