K. Koyama

A 2.5-ns clock access, 250-MHz, 256-Mb SDRAM with synchronous mirror delay

T. Saeki, Y. Nakaoka, Masafumi Fujita et al. · IEEE Journal of Solid-State Circuits · 1996 · 87 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 30-ns 64-Mb DRAM with built-in self-test and self-repair function

A. Tanabe, T. Takeshima, Hiroki Koike et al. · IEEE Journal of Solid-State Circuits · 1992 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +17

Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time

K. Saino, S. Horiba, Shiro Uchiyama et al. · 2002 · 71 citations

Engineering, Electrical Engineering, Electronic Materials +16

A 1-gb/s/pin 512-mb ddrii sdram using a digital dll and a slew-rate-controlled output buffer

T. Matano, Y. Takai, T. Takahashi et al. · IEEE Journal of Solid-State Circuits · 2003 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 7.68 GIPS 3.84 GB/s 1W parallel image processing RAM integrating a 16 Mb DRAM and 128 processors

Y. Aimoto, Tsukasa Kimura, Y. Yabe et al. · 2002 · 28 citations

Engineering, Computer Engineering, Computer Science +17