S. Horiba

Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time

K. Saino, S. Horiba, Shiro Uchiyama et al. · 2002 · 71 citations

Engineering, Electrical Engineering, Electronic Materials +16

A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation

F. Hayashi, H. Ohkubo, Tomoko Takahashi et al. · 2002 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +13

16 Mbit SRAM cell technologies for 2.0 V operation

H. Ohkubo, S. Horiba, F. Hayashi et al. · 2002 · 14 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 250-Mb/s/pin, 1-Gb double-data-rate SDRAM with a bidirectional delay and an interbank shared redundancy scheme

Y. Takai, Masafumi Fujita, K. Nagata et al. · IEEE Journal of Solid-State Circuits · 2000 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +16

Control of trench sidewall stress in bias ECR-CVD oxide-filled STI for enhanced DRAM data retention time

K. Saino, K. Okonogi, S. Horiba et al. · 2002 · 10 citations

Engineering, Electrical Engineering, Electronic Materials +12