Concepedia

F. Hayashi

FH

4

Publications

57

Citations

4

H-Index

2002

Active since

Affiliations

NEC (Japan)(Current)

F. Hayashi is an author at NEC (Japan) specializing in microelectronics, applied physics, and engineering.

Top concepts

EngineeringApplied PhysicsMicroelectronicsElectrical EngineeringNanoelectronicsVlsi DesignComputer EngineeringComputer ArchitectureMemory DevicesSurface Science

Publications per year

2002–2007

4

Publications

4

A highly stable SRAM memory cell with top-gated P-N drain poly-Si TFTs for 1.5 V operation

F. Hayashi, H. Ohkubo, Tomoko Takahashi et al. · 2002 · 21 citations

Novel Memory Cell, Non-volatile Memory, Electrical Engineering +12

16 Mbit SRAM cell technologies for 2.0 V operation

H. Ohkubo, S. Horiba, F. Hayashi et al. · 2002 · 14 citations

Non-volatile Memory, Engineering, Vlsi Design +17

A high performance polysilicon TFT using RTA and plasma hydrogenation applicable to highly stable SRAMs of 16 Mbit and beyond

F. Hayashi, M. Kitakata · 2003 · 12 citations

Materials Science, Electrical Engineering, Engineering +11

Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS

Ziyuan Liu, Shinji Fujieda, F. Hayashi et al. · 2007 · 10 citations

Engineering, Tunnel Oxide, Liner Nitride Film +19

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