T. Takeshima

A 30-ns 64-Mb DRAM with built-in self-test and self-repair function

A. Tanabe, T. Takeshima, Hiroki Koike et al. · IEEE Journal of Solid-State Circuits · 1992 · 79 citations

Engineering, Emerging Memory Technology, Mem Testing +16

A 30-ns 256-Mb DRAM with a multidivided array structure

Tadahiko Sugibayashi, T. Takeshima, I. Naritake et al. · IEEE Journal of Solid-State Circuits · 1993 · 39 citations

Engineering, Vlsi Design, Emerging Memory Technology +17

A BIST scheme using microprogram ROM for large capacity memories

Hiroki Koike, T. Takeshima, M. Takada · 2002 · 38 citations

Bist Scheme, Lsi Memories, Non-volatile Memory +19

A 4-Mbit DRAM with half-internal-voltage bit-line precharge

M. Takada, T. Takeshima, M. Sakamoto et al. · IEEE Journal of Solid-State Circuits · 1986 · 24 citations

Hardware Security, Constant Voltage Converter, Electrical Engineering +11

A 98 mm/sup 2/ die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell

M. Ohkawa, Hiroshi Sugawara, N. Sudo et al. · IEEE Journal of Solid-State Circuits · 1996 · 23 citations

Non-volatile Memory, Mm/sup 2/, Vlsi Design +16