F. Bourgeois

Statistics

Publications

Citations

161

H-Index

Active since

2009

Affiliations

United Monolithic Semiconductors (Germany)(Current)

United Monolithic Semiconductor (France)

NXP (Netherlands)

Fraunhofer Institute for Applied Solid State Physics

Universität Ulm

F. Bourgeois is an author at United Monolithic Semiconductors (Germany) specializing in electrical engineering, engineering, and semiconductor devices.

Publications per year

2009–2012

Publications

Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Helmut Jung, R. Behtash, J. Thorpe et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

M. Dammann, W. Pletschen, Patrick Waltereit et al. · Microelectronics Reliability · 2009 · 29 citations

Engineering, Electrical Engineering, Materials Science +16

New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit

D. Floriot, H. Blanck, Diane Bouw et al. · European Microwave Integrated Circuit Conference · 2012 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification

Benoît Lambert, J. Thorpe, R. Behtash et al. · Microelectronics Reliability · 2012 · 19 citations

Engineering, Electrical Engineering, Materials Science +14

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

M. Baeumler, Frank Gütle, V. M. Polyakov et al. · Journal of Electronic Materials · 2010 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

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