Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy - Concepedia

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Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

19

Citations

10

References

2010

Year

M. Baeumler, Frank Gütle, V. M. Polyakov, Markus Cäsar, Michael Dammann, H. Konstanzer, W. Pletschen, W. Bronner, R. Quay, Patrick Waltereit,

Journal of Electronic Materials

Wide-bandgap SemiconductorElectrical EngineeringEngineeringLeakage CurrentApplied PhysicsAluminum Gallium NitrideGan Power DeviceAlgan/gan HemtsElectroluminescence MicroscopyCategoryiii-v Semiconductor

References

	Year	Citations

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