M. Baeumler - Concepedia

Author

M. Baeumler

Fraunhofer Institute for Applied Solid State Physics

Also Known As

M Baeumler, M. Baeumler, Martina Baeumler

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics University of Freiburg Fraunhofer-Gesellschaft Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy Technische Universität Ilmenau

About

M. Baeumler is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	34	1.1K
2	Applied Physics	18	34	1.1K
3	Electrical Engineering	10	10	280
4	Natural Sciences	7	7	385
5	Chemistry	3	3	312

M. Baeumler

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Electronic structure of the neutral manganese acceptor in gallium arsenide J. Schneider, U. Kaufmann, W. Wilkening, Physical Review Letters EngineeringMagnetic ResonanceChemistrySpintronic MaterialSpin Dynamic	1987	280
Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41 M. Baeumler, Yuan Lu, Nicolas Kurz, Journal of Applied Physics Materials ScienceIi-vi SemiconductorWurtzite Al1−xscxn/al2o3Aluminium NitrideEngineering	2019	90
Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures O. Ambacher, B. Christian, M. Yassine, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringPredicted PolarizationInaln/inn HeterostructuresSemiconductors	2021	81
Photoresponse of the AsGa antisite defect in as-grown GaAs M. Baeumler, U. Kaufmann, J. Windscheif Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesEnergy HνSemiconductors	1985	72
Densification of Thin Aluminum Oxide Films by Thermal Treatments V. Cimalla, M. Baeumler, Lutz Kirste, Materials Sciences and Applications Materials ScienceMaterials EngineeringSurface TechnologyEngineeringAlox Films	2014	53
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures Patrick Waltereit, S. Müller, Konrad Bellmann, Journal of Applied Physics Aluminium NitrideLayer ThicknessElectrical EngineeringWide-bandgap SemiconductorEngineering	2009	46
Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test Markus Caesar, M. Dammann, V. M. Polyakov, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorBarrier Layer	2012	41
Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering R. E. Sah, Lutz Kirste, M. Baeumler, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringAluminium NitrideEpitaxial GrowthEngineering	2010	38
New omnipresent electron paramagnetic resonance signal in as-grown semi-insulating liquid encapsulation Czochralski GaAs U. Kaufmann, M. Baeumler, J. Windscheif, Applied Physics Letters Materials ScienceNew ResonanceEngineeringPhysicsApplied Physics	1986	26
Facet degradation of high-power diode laser arrays Jens W. Tomm, E. Thamm, A. Bärwolff, Applied Physics A PhotonicsElectrical EngineeringEngineeringApplied PhysicsLaser Safety	2000	25

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