Physical Review Letters · 1987 · 282 citations · 11 references
Natural SciencesMaterials ScienceElectronic MaterialsInorganic ChemistrySemiconductor MaterialsElectron Paramagnetic ResonanceElectron Spin Resonance SpectroscopyExchange InteractionsIii-v SemiconductorsElectronic Structure AnalysisGallium ArsenideHigh-frequency Electron Spin Resonance
A new maganese-related isotropic electron-spin-resonance signal at g=2.77 has been observed in GaAs. It is shown to arise from the neutral Mn acceptor, ${\mathrm{Mn}}^{0}$. The analysis gives an answer to the longstanding question of whether the structure of ${\mathrm{Mn}}^{0}$ correponds to the 3${\mathrm{d}}^{4}$ or to the 3${\mathrm{d}}^{5}$+hole. The data clearly favor the latter case, thus revealing that Mn is an exception within the 3d acceptor family in GaAs.
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Infrared Absorption in Some II-VI Compounds Doped with Cr
J. T. Vallin, Glen A. Slack, S. Roberts et al. · Physical review. B, Solid state · 1970 · 259 citations