Concepedia

Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification

Benoît Lambert, J. Thorpe, R. Behtash, B. Schauwecker, F. Bourgeois, H. Jung, J. Bataille, P. Mezenge, C. Gourdon, C. Ollivier,

Microelectronics Reliability · 2012 · 19 citations · 3 references

DOI

Concepts

References

3

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

Jungwoo Joh, Ling Xia, Jesús A. del Alamo · 2007 · 108 citations

, , +17

RF power degradation of GaN High Electron Mobility Transistors

Jungwoo Joh, Jesús A. del Alamo · 2010 · 45 citations · Full text

, , +17

New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit

D. Floriot, H. Blanck, Diane Bouw et al. · European Microwave Integrated Circuit Conference · 2012 · 19 citations

, , +17