B. Schauwecker

Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

Piero Gamarra, C. Lacam, M. Tordjman et al. · Journal of Crystal Growth · 2014 · 42 citations

Engineering, Materials Engineering, Materials Science +14

Reduced order modeling of fluid structural interactions in MEMS based on model projection techniques

Jan Mehner, Wolfram Doetzel, B. Schauwecker et al. · 2004 · 41 citations

Engineering, Electrical Engineering, Mechanical Engineering +17

RF-MEMS switching concepts for high power applications

K.M. Strohm, B. Schauwecker, D. Pilz et al. · 2002 · 24 citations

Engineering, Electrical Engineering, Mechanical Engineering +17

Investigations of rf shunt airbridge switches among different environmental conditions

B. Schauwecker, Jan Mehner, K.M. Strohm et al. · Sensors and Actuators A Physical · 2004 · 22 citations

Engineering, Electrical Engineering, Electromagnetics +6

Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification

Benoît Lambert, J. Thorpe, R. Behtash et al. · Microelectronics Reliability · 2012 · 19 citations

Engineering, Electrical Engineering, Materials Science +14