L. Kehias - Concepedia

Concepedia

Author

L. Kehias

United States Air Force Research Laboratory

Also Known As

L. Kehias, L.T. Kehias

27

Publications

1.3K

Citations

11

H-Index

22

Concepts

All Affiliations

United States Air Force Research Laboratory Wright-Patterson Air Force Base Wright State University Wolfspeed, Inc. (United States)University of California, Santa Barbara

LK

About

L. Kehias is an author at United States Air Force Research Laboratory specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	1.3K
2	Electrical Engineering	11	11	1.3K
3	Applied Physics	7	7	1.1K
4	Antenna	2	2	49
5	Computer Engineering	1	1	20

L. Kehias

×

11

Publications

1.3K

Citations

11

H-Index

	Year	Citations
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard, K. Doverspike, W.L. Pribble, IEEE Electron Device Letters Wide-bandgap SemiconductorRecord PerformanceElectrical EngineeringEngineeringRf Semiconductor	1999	535
High Al-content AlGaN/GaN MODFETs for ultrahigh performance Yifeng Wu, B.P. Keller, P. Fini, IEEE Electron Device Letters Wide-bandgap SemiconductorUltrahigh PerformanceElectrical EngineeringEngineeringNanoelectronics	1998	280
Microwave performance of AlGaN/GaN inverted MODFET's Özgür Aktaş, Z. Fan, A. Botchkarev, IEEE Electron Device Letters Electrical EngineeringMicrowave PerformanceEngineeringRf SemiconductorInverted Algan/gan Modfet	1997	105
Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz Yifeng Wu, B.P. Keller, S. Keller, IEEE Electron Device Letters /Spl Aring/Wide-bandgap SemiconductorElectrical Engineering50-Ghz F/sub T/Engineering	1997	97
Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors B. Bayraktaroglu, J. Barrette, L. Kehias, IEEE Electron Device Letters Electrical EngineeringEngineeringRf SemiconductorHigh-power-density Cw OperationHigh-frequency Device	1993	80
Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology Jeremy D. Gassmann, Paul Watson, L. Kehias, IEEE MTT-S International Microwave Symposium digest Wide-bandgap SemiconductorElectrical EngineeringGan TechnologyEngineeringRf Semiconductor	2007	71
Ultrahigh-efficiency power amplifier for space radar applications T. Quach, Paul Watson, W. Okamura, IEEE Journal of Solid-State Circuits RadarFrequency BandElectrical EngineeringEngineeringRadio Frequency	2002	37
High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs P. Parikh, Yifeng Wu, M. Moore, Electrical EngineeringEngineeringGan HemtsAlgan-gan HemtsRf Semiconductor	2003	32
Ultra-high efficiency operation based on an alternative class-E mode Paul Watson, R. Neidhard, L. Kehias, Low-power ElectronicsElectrical EngineeringEnergy HarvestingEngineeringNon-ideal Device Characteristics	2002	20
Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs B. Bayraktaroglu, Robert Fitch, J. Barrette, Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringThermal Engineering	2002	15

Page 1