L. Kehias

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard, K. Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters · 1999 · 535 citations

Wide-bandgap Semiconductor, Record Performance, Electrical Engineering +10

High Al-content AlGaN/GaN MODFETs for ultrahigh performance

Yifeng Wu, B.P. Keller, P. Fini et al. · IEEE Electron Device Letters · 1998 · 280 citations

Wide-bandgap Semiconductor, Ultrahigh Performance, Electrical Engineering +10

Microwave performance of AlGaN/GaN inverted MODFET's

Özgür Aktaş, Z. Fan, A. Botchkarev et al. · IEEE Electron Device Letters · 1997 · 105 citations

Electrical Engineering, Microwave Performance, Engineering +10

Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz

Yifeng Wu, B.P. Keller, S. Keller et al. · IEEE Electron Device Letters · 1997 · 97 citations

/Spl Aring/, Wide-bandgap Semiconductor, Electrical Engineering +12

Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors

B. Bayraktaroglu, J. Barrette, L. Kehias et al. · IEEE Electron Device Letters · 1993 · 80 citations

Electrical Engineering, Engineering, Rf Semiconductor +11