IEEE Electron Device Letters · 1993 · 80 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsSemiconductor HeterostructuresThermal ManagementCurrentsGainHeterojunction Bipolar TransistorsMicrowave DevicesMicrowave TransistorsRadio-frequency DevicesThermal Effects In Microwave DevicesThermal Management In High-frequency Devices
Thermal instability of multi-emitter high-power microwave heterojunction bipolar transistors (HBTs) was eliminated using a novel heat spreading technique that regulates internal device currents to avoid the formation of hot spots. Devices with 2- and 3- mu m minimum emitter sizes and no intentional ballast resistors showed unconditionally stable CW operation up to the device electronic limitations. A record 10-mW/ mu m/sup 2/ power density was obtained at 10 GHz with 7-dB gain and 60% power-added efficiency. The highest efficiency was 67.2% at 9.3-mW/ mu m/sup 2/ power density. It was shown that stable high-power-density operation can be maintained at multiwatt output power levels.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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High power density pulsed X-band heterojunction bipolar transistors
M.G. Adlerstein, M. P. Zaitlin, G. W. Flynn et al. · Electronics Letters · 1991 · 19 citations