C. Radens

Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

J. Mandelman, R.H. Dennard, G. Bronner et al. · IBM Journal of Research and Development · 2002 · 262 citations

Non-volatile Memory, Engineering, Dynamic Random-access Memory +16

Fluctuation limits & amp; scaling opportunities for CMOS SRAM cells

A.J. Bhavnagarwala, Stephen Kosonocky, C. Radens et al. · 2006 · 158 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

A Sub-600-mV, Fluctuation Tolerant 65-nm CMOS SRAM Array With Dynamic Cell Biasing

A.J. Bhavnagarwala, Stephen Kosonocky, C. Radens et al. · IEEE Journal of Solid-State Circuits · 2008 · 94 citations

Electrical Engineering, Engineering, Vlsi Design +12

A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and Read-Ability Enhancements

Harold Pilo, Igor Arsovski, Kevin Batson et al. · IEEE Journal of Solid-State Circuits · 2011 · 79 citations

Non-volatile Memory, Engineering, Vlsi Design +19