Yung-Huei Lee - Concepedia

Author

Yung-Huei Lee

Intel (United States)

Also Known As

Yung-Huei Lee, Yung-huei Lee

Publications

318

Citations

H-Index

Concepts

All Affiliations

Intel (United States)Taiwan Semiconductor Manufacturing Company (Taiwan)

About

Yung-Huei Lee is an author at Intel (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	246
2	Electrical Engineering	10	10	246
3	Computer Engineering	8	8	204
4	Applied Physics	3	3	80
5	Computer Architecture	3	3	49

Yung-Huei Lee

Publications

261

Citations

H-Index

Page 1

	Year	Citations
Prediction of Logic Product Failure Due To Thin-Gate Oxide Breakdown Yung-Huei Lee, Neal Mielke, M. Agostinelli, ReliabilityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability	2006	60
Effect of pMOST bias-temperature instability on circuit reliability performance Yung-Huei Lee, Neal Mielke, Babak Sabi, EngineeringPmost Bias-temperature InstabilityLogic Product SpeedPower ElectronicsStability	2004	35
Shallow Trench Isolation Edge Effect on Random Telegraph Signal Noise and Implications for Flash Memory Ruey-Ven Wang, Yung-Huei Lee, Yin-Lung Ryan Lu, IEEE Transactions on Electron Devices Electrical EngineeringWidth ScalingEngineeringStress-induced Leakage CurrentFlash Memory	2009	30
RTS Noise Characterization in Flash Cells Sing-Rong Li, William McMahon, Yin-Lung Ryan Lu, IEEE Electron Device Letters Electrical EngineeringEngineeringNanoelectronicsOxide DepthFlash Memory	2008	28
Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C Meng-Chun Shih, Chia-Yu Wang, Yung-Huei Lee, Reflow SolderingNon-volatile MemoryReliability StudyEngineeringEmerging Memory Technology	2016	22
Industrially Applicable Read Disturb Model and Performance on Mega-Bit 28nm Embedded RRAM Chang-Feng Yang, Chun-Yu Wu, Ming-Han Yang, Nm Select TransistorElectrical EngineeringEmbedded RramEngineeringNon-volatile Memory	2020	17
Time-zero-variability and BTI impact on advanced FinFET device and circuit reliability Subhadeep Mukhopadhyay, Yung-Huei Lee, Jen-Hao Lee Microelectronics Reliability Electrical EngineeringEngineeringHardware ReliabilityBti ImpactBias Temperature Instability	2018	16
Composition Segregation of Ge-Rich GST and Its Effect on Reliability Yung-Huei Lee, P. J. Liao, Vincent Hou,	2021	15
Implant damage and gate-oxide-edge effects on product reliability Yung-Huei Lee, R. Nachman, Shiliang Hu, ReliabilityHardware SecurityElectrical EngineeringReliability EngineeringEngineering	2005	14
The impact of PMOST bias-temperature degradation on logic circuit reliability performance Yung-Huei Lee, Steve Jacobs, Stefan Stadler, Microelectronics Reliability ReliabilityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability	2004	14

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