Meng-Chun Shih

13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference

Yu-Der Chih, Yi-Chun Shih, Chia-Fu Lee et al. · 2020 · 92 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +20

Recent Progress and Next Directions for Embedded MRAM Technology

W. J. Gallagher, Eric Chien, Tien-Wei Chiang et al. · 2019 · 23 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +11

Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C

Meng-Chun Shih, Chia-Yu Wang, Yung-Huei Lee et al. · 2016 · 22 citations

Reflow Soldering, Non-volatile Memory, Reliability Study +22

Recent Progress and Next Directions for Embedded MRAM Technology

W. J. Gallagher, Eric Chien, Tien-Wei Chiang et al. · 2019 · 17 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +11

Reliability Demonstration of Reflow Qualified 22nm STT-MRAM for Embedded Memory Applications

Chia-Yu Wang, Meng-Chun Shih, Chih-Hui Weng et al. · 2020 · 10 citations