Maximilien Glorieux

Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology

Rui Liu, Veronique Ferlet-Cavrois, Adrian Evans et al. · IEEE Transactions on Nuclear Science · 2016 · 71 citations

Engineering, Single Event Transient, Heavy Ion +21

SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts

Gilles Gasiot, Dimitri Soussan, Maximilien Glorieux et al. · 2014 · 47 citations

Electrical Engineering, Engineering, Consumer Applications +15

Detailed SET Measurement and Characterization of a 65 nm Bulk Technology

Maximilien Glorieux, Adrian Evans, Véronique Ferlet-Cavrois et al. · IEEE Transactions on Nuclear Science · 2016 · 33 citations

Engineering, Vlsi Design, Nm Bulk Technology +21

New D-Flip-Flop Design in 65 nm CMOS for Improved SEU and Low Power Overhead at System Level

Maximilien Glorieux, Sylvain Clerc, Gilles Gasiot et al. · IEEE Transactions on Nuclear Science · 2013 · 27 citations

Engineering, Vlsi Design, Nm Cmos +16

Single event multiple transient (SEMT) measurements in 65 nm bulk technology

Adrian Evans, Maximilien Glorieux, Dan Alexandrescu et al. · 2016 · 24 citations

Electrical Engineering, Engineering, Vlsi Design +15