Single event multiple transient (SEMT) measurements in 65 nm bulk technology

Abstract

This paper presents the results of a detailed characterization of Single Event Multiple Transients (SEMTs) in a 65 nm bulk process technology. Advanced test structures are described and heavy-ion test results are presented. Chains with different gate types and topologies are studied. Measured results include both cross-sections and pulse widths. The impact of tilt on the extent of SEMTs is investigated.